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DN3545N3-GP005 PDF预览

DN3545N3-GP005

更新时间： 2024-11-14 15:31:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 输入元件开关晶体管
页数 文件大小 规格书
6页 829K
描述
SMALL SIGNAL, FET

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中文翻译

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DN3545N3-GP005 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.64
其他特性：HIGH INPUT IMPEDANCE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：450 V最大漏极电流 (ID)：0.136 A
最大漏源导通电阻：20 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：15 pFJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-W3元件数量：1
端子数量：3工作模式：DEPLETION MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL极性/信道类型：N-CHANNEL
功耗环境最大值：0.74 W最大功率耗散 (Abs)：0.74 W
表面贴装：NO端子形式：WIRE
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DN3545N3-GP005 数据手册

 浏览型号DN3545N3-GP005的Datasheet PDF文件第2页浏览型号DN3545N3-GP005的Datasheet PDF文件第3页浏览型号DN3545N3-GP005的Datasheet PDF文件第4页浏览型号DN3545N3-GP005的Datasheet PDF文件第5页浏览型号DN3545N3-GP005的Datasheet PDF文件第6页 
Supertex inc.  
DN3545  
N-Channel Depletion-Mode  
Vertical DMOS FET  
General Description  
Features  
► High input impedance  
► Low input capacitance  
► Fast switching speeds  
► Low on-resistance  
► Free from secondary breakdown  
► Low input and output leakage  
These depletion-mode (normally-on) transistors utilize an  
advanced vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
Applications  
► Normally-on switches  
► Solid state relays  
► Converters  
► Linear amplifiers  
► Constant current sources  
► Power supply circuits  
► Telecom  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Product Summary  
Ordering Information  
BVDSX/BVDGX  
R
DS(ON) (max)  
I
DSS (min)  
Part Number  
Package Options  
Packing  
450V  
20Ω  
200mA  
SN3545N3-G  
TO-92  
1000/Bag  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
SN3545N3-G P002  
SN3545N3-G P003  
SN3545N3-G P005  
SN3545N3-G P013  
SN3545N3-G P014  
SN3545N8-G  
TO-92  
Pin Configuration  
TO-92  
DRAIN  
TO-92  
TO-92  
DRAIN  
SOURCE  
TO-92  
SOURCE  
DRAIN  
GATE  
TO-243AA (SOT-89)  
GATE  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
TO-92  
TO-243AA (SOT-89)  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92 Taping  
Specifications and Winding Styles  
Product Marking  
SiDN  
3 5 4 5  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
= “Green” Packaging  
Absolute Maximum Ratings  
Parameter  
Value  
BVDSX  
Package may or may not include the following marks: Si or  
Drain-to-source voltage  
Drain-to-gate voltage  
Gate-to-source voltage  
Operating and storage temperature  
TO-92  
BVDGX  
W = Code for week sealed  
±20V  
DN5MW  
= “Green” Packaging  
-55OC to +150OC  
Package may or may not include the following marks: Si or  
Absolute Maximum Ratings are those values beyond which damage to the device may  
occur. Functional operation under these conditions is not implied. Continuous operation  
of the device at the absolute rating level may affect device reliability. All voltages are  
referenced to device ground.  
TO-243AA (SOT-89)  
Typical Thermal Resistance  
Package  
θja  
132OC/W  
133OC/W  
TO-92  
TO-243AA (SOT-89)  
Doc.# DSFP-DN3545  
C070113  
Supertex inc.  
www.supertex.com  
123456

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