DN3545
N-Channel Depletion-Mode
Vertical DMOS FET
Features
General Description
These depletion-mode (normally-on) transistors utilize an
advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally-induced secondary
breakdown.
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
► Normally-on switches
► Solid state relays
► Converters
► Linear amplifiers
► Constant current sources
► Power supply circuits
► Telecom
Absolute Maximum Ratings
Parameter
Package Options
D
Value
BVDSX
BVDGX
±±2V
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
-55OC to +152OC
322OC
temperature
Soldering temperature*
S G D
G
S
D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
TO-92
TO-243AA
(front view)
(top view)
*Distance of 1.6mm from case for 10 seconds.
Ordering Information
Package Options
TO-243AA (SOT-89)
BVDSX
/
RDS(ON)
IDSS
(max)
(min)
BVDGX
TO-92
DN3545N3
DN3545N8
452V
±2Ω
±22mA
DN3545N3-G
DN3545N8-G
-G indicates package is RoHS compliant (‘Green’)