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DN3545 PDF预览

DN3545

更新时间: 2023-12-06 20:02:56
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
14页 1726K
描述
These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and we

DN3545 数据手册

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DN3545  
N-Channel Depletion-Mode Vertical DMOS FET  
Features  
General Description  
• High Input Impedance  
The DN3545 Depletion-mode normally-on transistor  
uses an advanced vertical Diffusion Metal Oxide Semi-  
conductor (DMOS) structure and a well-proven silicon-  
gate manufacturing process. This combination pro-  
duces a device with the power-handling capabilities of  
bipolar transistors and the high-input impedance and  
positive-temperature coefficient inherent in Metal-  
Oxide Semiconductor (MOS) devices. Characteristic of  
all MOS structures, this device is free from thermal  
runaway and thermally induced secondary breakdown.  
• Low Input Capacitance  
• Fast Switching Speeds  
• Low On-Resistance  
• Free from Secondary Breakdown  
• Low Input and Output Leakage  
Applications  
• Normally-On Switches  
• Solid-State Relays  
• Converters  
Vertical DMOS Field-Effect Transistors (FETs) are ide-  
ally suited to a wide range of switching and amplifying  
applications where very low threshold voltage, high  
breakdown voltage, high input impedance, low input  
capacitance and fast switching speeds are desired.  
• Linear Amplifiers  
• Constant-Current Sources  
• Power Supply Circuits  
Telecommunications  
Package Types  
3-lead TO-92  
(Top view)  
3-lead SOT-89  
(Top view)  
DRAIN  
DRAIN  
SOURCE  
DRAIN  
GATE  
SOURCE  
GATE  
See Table 3-1 and Table 3-2 for pin information.  
2018 Microchip Technology Inc.  
DS20005438A-page 1  

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