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DMP2004WK

更新时间： 2024-11-20 09:54:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 219K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMP2004WK 数据手册

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DMP2004WK  
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
•
•
•
Low On-Resistance  
•
•
Case: SOT-323  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Very Low Gate Threshold Voltage VGS(th) < 1V  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected Gate  
•
•
•
•
•
•
"Green" Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Weight: 0.006 grams (approximate)  
Drain  
SOT-323  
D
Gate  
G
S
Gate  
Protection  
Diode  
TOP VIEW  
ESD PROTECTED  
Source  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
-20  
Units  
V
Gate-Source Voltage  
±8  
V
Drain Current (Note 1)  
-400  
-1.4  
mA  
A
Pulsed Drain Current  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Pd  
Rθ  
Value  
250  
Units  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
500  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-20  
⎯
⎯
V
BVDSS  
IDSS  
IGSS  
⎯
⎯
⎯
⎯
-1.0  
V
GS = 0V, ID = -250mA  
VDS = -20V, VGS = 0V  
VGS = ±4.5V, VDS = 0V  
μA  
μA  
±1.0  
ON CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
-0.5  
-1.0  
V
VGS(th)  
⎯
VDS = VGS, ID = -250μA  
VGS = -4.5V, ID = -430mA  
VGS = -2.5V, ID = -300mA  
0.7  
1.1  
1.7  
0.9  
1.4  
2.0  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
Ω
V
GS = -1.8V, ID = -150mA  
VDS =10V, ID = -0.2A  
GS = 0V, IS = -115mA  
Forward Transfer Admittance  
Diode Forward Voltage (Note 4)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
200  
-0.5  
mS  
V
|Yfs|  
VSD  
⎯
⎯
⎯
-1.2  
V
175  
30  
20  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -16V, VGS = 0V  
f = 1.0MHz  
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
December 2007  
© Diodes Incorporated  
DMP2004WK  
Document number: DS30931 Rev. 4 - 2  
1234

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