5秒后页面跳转
DMP2008UFG PDF预览

DMP2008UFG

更新时间: 2024-11-19 01:10:31
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 261K
描述
Qualified to AEC-Q101 standards for High Reliability

DMP2008UFG 数据手册

 浏览型号DMP2008UFG的Datasheet PDF文件第2页浏览型号DMP2008UFG的Datasheet PDF文件第3页浏览型号DMP2008UFG的Datasheet PDF文件第4页浏览型号DMP2008UFG的Datasheet PDF文件第5页浏览型号DMP2008UFG的Datasheet PDF文件第6页 
DMP2008UFG  
20V P-CHANNEL ENHANCEMENT MODE MOSFET  
POWERDI®  
Product Summary  
Features  
Low RDS(ON) – ensures on state losses are minimized  
Small form factor thermally efficient package enables higher  
density end products  
ID max  
V(BR)DSS  
RDS(ON) max  
TA = +25°C  
-14A  
-10A  
-9.3A  
-8.3A  
8mΩ @ VGS = -4.5V  
9.8mΩ @ VGS = -2.5V  
13mΩ @ VGS = -1.8V  
17mΩ @ VGS = -1.5V  
Occupies just 33% of the board area occupied by SO-8 enabling  
smaller end product  
-20V  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 standards for High Reliability  
Description  
Mechanical Data  
This MOSFET is designed to minimize the on-state resistance  
(RDS(on)) and yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Case: POWERDI3333-8  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections Indicator: See diagram  
Terminals: Finish Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Weight: 0.008 grams (approximate)  
Applications  
Load Switch  
Power Management Functions  
Drain  
POWERDI3333-8  
Pin 1  
S
S
S
G
Gate  
D
D
D
Source  
D
Top View  
Bottom View  
Internal Schematic  
Ordering Information (Note 4)  
Part Number  
DMP2008UFG-7  
DMP2008UFG-13  
Case  
POWERDI3333-8  
POWERDI3333-8  
Packaging  
2000/Tape & Reel  
3000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
S36 = Product Type Marking Code  
YYWW = Date Code Marking  
YY = Last digit of year (ex: 11 = 2011)  
WW = Week code (01 ~ 53)  
POWERDI is a registered trademark of Diodes Incorporated  
1 of 6  
www.diodes.com  
August 2014  
© Diodes Incorporated  
DMP2008UFG  
Document number: DS35694 Rev. 14 - 2  

与DMP2008UFG相关器件

型号 品牌 获取价格 描述 数据表
DMP2008UFG_15 DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
DMP2008UFG-13 DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
DMP2008UFG-7 DIODES

获取价格

Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
DMP2008USS DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFG DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFG-13 DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFG-7 DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFV DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFV-13 DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFV-7 DIODES

获取价格

20V P-CHANNEL ENHANCEMENT MODE MOSFET