Datasheet > DMP2008UFG_15

DMP2008UFG_15

更新时间： 2024-02-08 18:17:13

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	261K
描述
20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDIÂ®

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中文翻译

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DMP2008UFG_15 数据手册

DMP2008UFG

20V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI^®

Product Summary

Features

•

Low R_DS(ON)– ensures on state losses are minimized

Small form factor thermally efficient package enables higher

density end products

I_Dmax

V_(BR)DSS

R_DS(ON)max

T_A= +25°C

-14A

-10A

-9.3A

-8.3A

8mΩ @ V_GS= -4.5V

9.8mΩ @ V_GS= -2.5V

13mΩ @ V_GS= -1.8V

17mΩ @ V_GS= -1.5V

•

Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

-20V

•

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

Description

Mechanical Data

This MOSFET is designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

•

Case: POWERDI3333-8

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.008 grams (approximate)

Applications

•

Load Switch

Power Management Functions

•

Drain

POWERDI3333-8

Pin 1

Gate

Source

Top View

Bottom View

Internal Schematic

Ordering Information (Note 4)

Part Number

DMP2008UFG-7

DMP2008UFG-13

Case

POWERDI3333-8

Packaging

2000/Tape & Reel

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

S36 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 11 = 2011)

WW = Week code (01 ~ 53)

S36

POWERDI is a registered trademark of Diodes Incorporated

1 of 6

www.diodes.com

August 2014

DMP2008UFG

Document number: DS35694 Rev. 14 - 2

12 3 4 5 6

中文翻译

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与DMP2008UFG_15相关器件

型号	品牌	获取价格	描述	数据表
DMP2008UFG-13	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
DMP2008UFG-7	DIODES	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
DMP2008USS	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFG	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFG-13	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFG-7	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFV	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFV-13	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFV-7	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2012SN	DIODES	获取价格	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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