DMP2018LFK
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
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Low On-Resistance
Low Input Capacitance
Low Input/Output Leakage
ESD Protected Gate up to 2kV
Lead Free by Design, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ID
V(BR)DSS
RDS(on)max
TA = 25°C
-12.8A
-10A
16mΩ @ VGS = -4.5V
25mΩ @ VGS = -2.0V
-20V
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: U-DFN2523-6
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
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DC-DC Converters
Power management functions
Notebook PC Applications
Portable Equipment Applications
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Weight: 0.008 grams (approximate)
Drain
U-DFN2523-6
Pin 1
Gate
Pin 1, 2 = Source
Pin 3 = Gate
Pin 4, 5, 6 = Drain
Gate
Protection
Diode
Source
Equivalent Circuit
ESD PROTECTED TO 2kV
Bottom View
Ordering Information (Note 3)
Part Number
DMP2018LFK-7
DMP2018LFK-13
Case
U-DFN2523-6
U-DFN2523-6
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
P8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
P8
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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www.diodes.com
March 2012
© Diodes Incorporated
DMP2018LFK
Document number: DS35357 Rev. 5 - 2