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DMP2022LSS

更新时间: 2024-01-24 09:50:55
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
5页 126K
描述
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

DMP2022LSS 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.68其他特性:HIGH RELIABILITY
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.013 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):35 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DMP2022LSS 数据手册

 浏览型号DMP2022LSS的Datasheet PDF文件第2页浏览型号DMP2022LSS的Datasheet PDF文件第3页浏览型号DMP2022LSS的Datasheet PDF文件第4页浏览型号DMP2022LSS的Datasheet PDF文件第5页 
DMP2022LSS  
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
Low On-Resistance  
Case: SO-8  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper lead frame.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072g (approximate)  
13m@ VGS = -10V  
16m@ VGS = -4.5V  
22m@ VGS = -2.5V  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
SO-8  
S
D
S
S
G
D
D
D
TOP VIEW  
Internal Schematic  
TOP VIEW  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
-20  
Units  
V
V
Gate-Source Voltage  
VGSS  
±12  
T
A = 25°C  
Drain Current (Note 1)  
Steady  
State  
-10  
-8  
A
A
ID  
TA = 70°C  
Pulsed Drain Current (Note 3)  
-35  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
2.5  
Unit  
W
PD  
Thermal Resistance, Junction to Ambient  
50  
°C/W  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
°C  
TJ, TSTG  
Notes:  
1. Device mounted on 2 oz. Copper pads on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width 10μS, Duty Cycle 1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 5  
www.diodes.com  
June 2010  
© Diodes Incorporated  
DMP2022LSS  
Document number: DS31373 Rev. 5 - 2  

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