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DMP2012SN_0711

更新时间： 2024-11-18 09:54:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 246K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMP2012SN_0711 数据手册

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DMP2012SN  
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
•
•
•
•
•
•
•
•
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected Gate  
"Green" Device (Note 4)  
•
•
Case: SC-59  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish – Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
Drain  
•
•
•
•
•
•
Qualified to AEC-Q101 Standards for High Reliability  
SC-59  
D
Gate  
ESD protected  
S
G
Gate  
Protection  
Diode  
TOP VIEW  
Source  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
Value  
-20  
Unit  
V
VDSS  
VGSS  
ID  
Gate-Source Voltage  
V
±12  
-0.7  
Drain Current (Note 1) Steady State  
Pulsed Drain Current (Note 3)  
A
-2.8  
A
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
500  
Unit  
mW  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
250  
°C/W  
°C  
Rθ  
JA  
-65 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
-20  
⎯
⎯
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
-10  
VGS = 0V, ID = 250mA  
μA VDS = -20V, VGS = 0V  
μA VGS = ±12V, VDS = 0V  
IGSS  
±10  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
-0.5  
-1.2  
V
VGS(th)  
⎯
0.23  
0.37  
VDS = VGS, ID = -250μA  
VGS = -4.5V, ID = -0.4A  
VGS = -2.5V, ID = -0.4A  
VDS = -10V, ID = 0.4A  
VGS = 0V, IS = -0.7A  
0.30  
0.50  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
Ω
Forward Transfer Admittance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
1.5  
S
V
|Yfs|  
VSD  
⎯
⎯
⎯
-1.1  
-0.8  
180  
120  
50  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -10V, VGS = 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
5
ns  
ns  
ns  
ns  
tD(ON)  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Turn-Off Delay Time  
55  
20  
70  
tD(OFF)  
VDD = -10V, ID = -0.4A,  
VGS = -5.0V, RGEN = 50Ω  
Turn-On Rise Time  
tr  
tf  
Turn-Off Fall Time  
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
November 2007  
© Diodes Incorporated  
DMP2012SN  
Document number: DS30790 Rev. 3 - 2  
1234

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