Datasheet > DMP2012SN

DMP2012SN

更新时间： 2024-09-23 03:30:07

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	205K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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DMP2012SN 数据手册

SPICE MODEL: DMP2012SN

DMP2012SN

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Gate

"Green" Device (Note 4)

SC-59

Dim

Min

0.30

1.40

2.50

0.85

0.30

1.70

2.70

⎯

Max

0.50

1.80

3.00

1.05

0.70

2.10

3.10

0.10

1.40

0.70

0.35

8°

TOP VIEW

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SC-59

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020C

Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking: See Last Page

Ordering & Date Code Information: See Last Page

Weight: 0.008 grams (approximate)

Drain

•

1.00

0.55

0.10

0°

•

Gate

Protection

Diode

All Dimensions in mm

Source

EQUIVALENT CIRCUIT

ESD protected

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

Value

-20

Unit

DSS

GSS

Gate-Source Voltage

±12

Drain Current (Note 1) Steady State

Pulsed Drain Current (Note 3)

-0.7

-2.8

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

500

°C/W

°C

250

θJA

-65 to +150

T , T

STG

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30790 Rev. 2 - 2

1 of 4

DMP2012SN

www.diodes.com

12 3 4

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