Datasheet > DMP2006UFGQ

DMP2006UFGQ

更新时间： 2024-11-19 14:53:35

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	438K
描述
20V P-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMP2006UFGQ 数据手册

DMP2006UFGQ

20V P-CHANNEL ENHANCEMENT MODE MOSFET

PowerDI3333-8

Product Summary

Features



Low R_DS(ON)– Ensures On State Losses are Minimized

Small Form Factor, Thermally Efficient Package Enables Higher

Density End Products

I_DMax

BV_DSS

R_DS(ON)Max

T_C= +25°C

-40A

5.5mΩ @ V_GS= -4.5V

7.5mΩ @ V_GS= -2.5V

-20V



Occupies just 33% of the Board Area Occupied by SO-8 Enabling

Smaller End Product



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)

Description and Applications

This MOSFET is designed to meet the stringent requirements of

Automotive applications. It is qualified to AEC-Q101, supported by a

PPAP and is ideal for use in:

Mechanical Data



Load Switch

Power Management Functions



Case: PowerDI 3333-8

Case Material: Molded Plastic, "Green" Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See Diagram

Terminals: Finish  Matte Tin Annealed over Copper Leadframe;

Solderable per MIL-STD-202, Method 208

Weight: 0.030 grams (Approximate)



PowerDI3333-8

Pin 1

Top View

Bottom View

Equivalent Circuit

Ordering Information (Note 5)

Part Number

DMP2006UFGQ-7

DMP2006UFGQ-13

Case

PowerDI3333-8

Packaging

2,000/Tape & Reel

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

PowerDI3333-8

S47 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 17 = 2017)

WW = Week Code (01 to 53)

S47

PowerDI is a registered trademark of Diodes Incorporated.

1 of 7

www.diodes.com

August 2017

DMP2006UFGQ

Document number: DS39936 Rev. 1 - 2

12 3 4 5 6 7

中文翻译

下载PDF

与DMP2006UFGQ相关器件

型号	品牌	获取价格	描述	数据表
DMP2007UFG	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2007UFG-13	DIODES	获取价格	Power Field-Effect Transistor, 18A I(D), 20V, 0.007ohm, 1-Element, P-Channel, Silicon, Met
DMP2007UFG-7	DIODES	获取价格	Power Field-Effect Transistor, 18A I(D), 20V, 0.007ohm, 1-Element, P-Channel, Silicon, Met
DMP2008UFG	DIODES	获取价格	Qualified to AEC-Q101 standards for High Reliability
DMP2008UFG_15	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
DMP2008UFG-13	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
DMP2008UFG-7	DIODES	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
DMP2008USS	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFG	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2010UFG-13	DIODES	获取价格	20V P-CHANNEL ENHANCEMENT MODE MOSFET

与DMP2006UFGQ相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

DMP2006UFGQ

DMP2006UFGQ 数据手册

与DMP2006UFGQ相关器件

与DMP2006UFGQ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMP2006UFGQ

DMP2006UFGQ 数据手册

与DMP2006UFGQ相关器件

与DMP2006UFGQ相关文章

您还可以找

您在本页遇到什么问题？