是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 23 weeks | 风险等级: | 1.62 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
峰值回流温度(摄氏度): | NOT SPECIFIED | 端子面层: | Matte Tin (Sn) |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
DMP2006UFG-13 | DIODES |
类似代替 |
Power Field-Effect Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMP2006UFGQ | DIODES |
获取价格 |
20V P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP2007UFG | DIODES |
获取价格 |
20V P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP2007UFG-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 20V, 0.007ohm, 1-Element, P-Channel, Silicon, Met | |
DMP2007UFG-7 | DIODES |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 20V, 0.007ohm, 1-Element, P-Channel, Silicon, Met | |
DMP2008UFG | DIODES |
获取价格 |
Qualified to AEC-Q101 standards for High Reliability | |
DMP2008UFG_15 | DIODES |
获取价格 |
20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI | |
DMP2008UFG-13 | DIODES |
获取价格 |
20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI | |
DMP2008UFG-7 | DIODES |
获取价格 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
DMP2008USS | DIODES |
获取价格 |
20V P-CHANNEL ENHANCEMENT MODE MOSFET | |
DMP2010UFG | DIODES |
获取价格 |
20V P-CHANNEL ENHANCEMENT MODE MOSFET |