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DMN5L06DWK_0711

更新时间： 2024-11-29 09:54:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 368K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN5L06DWK_0711 数据手册

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DMN5L06DWK  
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
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Dual N-Channel MOSFET  
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Case: SOT-363  
Low On-Resistance (1.0V max)  
Very Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected up to 2kV  
"Green" Device (Note 4)  
Qualified to AEC-Q101 standards for High Reliability  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Finish – Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.006 grams (approximate)  
•
•
•
•
•
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SOT-363  
D2  
G1  
S1  
S2  
G2  
D1  
ESD protected up to 2kV  
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain Source Voltage  
Symbol  
Value  
50  
Unit  
V
VDSS  
VGSS  
Gate-Source Voltage  
Drain Current (Note 1)  
V
±20  
305  
800  
Continuous  
Pulsed (Note 3)  
mA  
ID  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Rθ  
Value  
250  
Unit  
mW  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
500  
°C/W  
°C  
JA  
-65 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
50  
V
BVDSS  
IDSS  
⎯
⎯
⎯
60  
VGS = 0V, ID = 10μA  
VDS = 50V, VGS = 0V  
VGS = ±12V, VDS = 0V  
VGS = ±10V, VDS = 0V  
VGS = ±5V, VDS = 0V  
nA  
@ TC = 25°C  
⎯
1
500  
50  
μA  
nA  
nA  
Gate-Body Leakage  
IGSS  
⎯
⎯
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
0.49  
1.0  
V
VGS(th)  
⎯
VDS = VGS, ID = 250μA  
VGS = 1.8V, ID = 50mA  
VGS = 2.5V, ID = 50mA  
VGS = 5.0V, ID = 50mA  
VGS = 10V, VDS = 7.5V  
VDS =10V, ID = 0.2A  
⎯
⎯
⎯
0.5  
200  
0.5  
⎯
⎯
⎯
1.4  
⎯
3.0  
2.5  
2.0  
Static Drain-Source On-Resistance  
RDS (ON)  
Ω
On-State Drain Current  
A
mS  
V
ID(ON)  
|Yfs|  
⎯
⎯
1.4  
Forward Transconductance  
Source-Drain Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VSD  
⎯
VGS = 0V, IS = 115mA  
50  
25  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 25V, VGS = 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
5.0  
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
November 2007  
© Diodes Incorporated  
DMN5L06DWK  
Document number: DS30930 Rev. 4 - 2  
1234

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