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DMN5L06WK_09

更新时间： 2024-09-17 09:54:15
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美台 - DIODES /
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N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN5L06WK_09 数据手册

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DMN5L06WK  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
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•
•
•
•
•
•
•
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Low On-Resistance  
Very Low Gate Threshold Voltage (1.0V max)  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead, Halogen and Antimony Free RoHS Compliant (Note 2)  
ESD Protected Up To 2kV  
"Green" Device (Note 4)  
•
•
Case: SOT-323  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.  
Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.006 grams (approximate)  
•
•
•
•
•
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Qualified to AEC-Q101 standards for High Reliability  
SOT-323  
D
G
S
ESD protected up to 2kV  
TOP VIEW  
TOP VIEW  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain Source Voltage  
Symbol  
VDSS  
Value  
50  
Unit  
V
Gate-Source Voltage  
Drain Current (Note 1)  
V
VGSS  
±20  
300  
800  
Continuous  
Pulsed (Note 3)  
mA  
ID  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Rθ  
Value  
250  
Unit  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
500  
JA  
-65 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
50  
V
BVDSS  
IDSS  
⎯
⎯
⎯
60  
VGS = 0V, ID = 10μA  
VDS = 50V, VGS = 0V  
VGS = ±12V, VDS = 0V  
VGS = ±10V, VDS = 0V  
VGS = ±5V, VDS = 0V  
nA  
@ TC = 25°C  
⎯
1
500  
50  
μA  
nA  
nA  
Gate-Body Leakage  
IGSS  
⎯
⎯
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
0.49  
1.0  
V
VGS(th)  
⎯
VDS = VGS, ID = 250μA  
VGS = 1.8V, ID = 50mA  
VGS = 2.5V, ID = 50mA  
VGS = 5.0V, ID = 50mA  
VGS = 10V, VDS = 7.5V  
VDS =10V, ID = 0.2A  
⎯
⎯
⎯
0.5  
200  
0.5  
⎯
⎯
⎯
1.4  
⎯
3.0  
2.5  
2.0  
Static Drain-Source On-Resistance  
RDS (ON)  
Ω
On-State Drain Current  
A
mS  
V
ID(ON)  
|Yfs|  
⎯
⎯
1.4  
Forward Transconductance  
Source-Drain Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VSD  
⎯
VGS = 0V, IS = 115mA  
50  
25  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 25V, VGS = 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
5.0  
Notes:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead. Halogen and Antimony Free  
3. Pulse width ≤10μS, Duty Cycle ≤1%.  
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 5  
www.diodes.com  
April 2009  
© Diodes Incorporated  
DMN5L06WK  
Document number: DS30928 Rev. 6 - 2  
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