Datasheet > DMN5L06K_15

DMN5L06K_15

更新时间： 2024-11-30 01:21:19

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	265K
描述
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DMN5L06K_15 数据手册

DMN5L06K

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

Very Low Gate Threshold Voltage (1.0V max)

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

I_D

V_(BR)DSS

R_DS(ON)

T_A= +25°C

300 mA

200 mA

2.0Ω @ V_GS= 5.0V

2.5Ω @ V_GS= 2.5V

50V

ESD Protected Up To 2kV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

Description and Applications

Mechanical Data

This new generation 50V N-Channel Enhancement Mode MOSFET

has been designed to minimize RDS(on) and yet maintain superior

switching performance. This device is ideal for use in Notebook

battery power management and Load switch.



Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208



Load switches

Level switches



Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

Drain

SOT23

Gate

Protection

Diode

Source

Top View

Equivalent Circuit

ESD PROTECTED TO 2kV

Ordering Information (Note 4)

Part Number

DMN5L06K-7

DMN5L06KQ-7

Qualification

Commercial

Automotive

Case

SOT23

Packaging

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DAB = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: T = 2006)

DAB

M = Month (ex: 9 = September)

Date Code Key

Year

2006

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

March 2014

DMN5L06K

Document number: DS30929 Rev. 8 - 2

12 3 4 5 6

中文翻译

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与DMN5L06K_15相关器件

型号	品牌	获取价格	描述	数据表
DMN5L06K-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06K-7-F	TYSEMI	获取价格	Product specification
DMN5L06KQ-7	DIODES	获取价格	null
DMN5L06T	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06T-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06TK	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06TK-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06V	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06V-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN5L06VA	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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