DMN5L06W
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Lead-free Green
Features
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N-Channel MOSFET
SOT-323
Low On-Resistance
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
Very Low Gate Threshold Voltage
Low Input Capacitance
A
D
B
Fast Switching Speed
C
Low Input/Output Leakage
C
B
D
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
0.65 Nominal
S
G
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
G
H
K
J
M
J
Mechanical Data
K
0.90
0.25
0.10
0°
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Case: SOT-323
L
D
F
L
Case Material: Molded Plastic, "Green" Molding
M
Compound. UL Flammability Classification Rating 94V-0
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Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
a
Drain
All Dimensions in mm
Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
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Marking: Date Code and Type Code, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Gate
Source
EQUIVALENT CIRCUIT
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
Value
50
Units
V
V
Drain-Source Voltage
VDGR
50
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
±20
±40
VGSS
V
ID
IDM
280
1.5
mA
A
Drain Current (Note 1)
Continuous
Pulsed
Drain Current (Note 1)
Pd
Total Power Dissipation (Note 1)
200
mW
°C/W
°C
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
625
-55 to +150
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30613 Rev. 3 - 2
1 of 4
DMN5L06W
www.diodes.com
ã Diodes Incorporated