Datasheet > DMN30H4D1S-13

DMN30H4D1S-13

更新时间： 2025-09-17 19:27:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	587K
描述
元器件封装:SOT-23-3;

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中文翻译

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DMN30H4D1S-13 数据手册

DMN30H4D1S

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low Gate-Threshold Voltage

I_DMax

T_A= +25°C

0.43A

BV_DSS

R_DS(ON)Max

Low-Input Capacitance

4.0Ω @ V_GS= 10V

5.0Ω @ V_GS= 4.5V

Fast-Switching Speed

300V

0.39A

Small Surface-Mount Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

Description



Case: SOT23

Case Material: Molded Plastic; UL Flammability Classification

Rating 94V-0

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) yet maintain superior switching performance,

which makes the device ideal for high-efficiency power-

management applications.



Moisture Sensitivity: Level 3 per J-STD-020

Terminals: Solderable per MIL-STD-202, Method 208

Lead-Free Plating—Matte Tin Finish Annealed over Alloy 42

Leadframe

Applications



Terminal Connections—See Diagram



DC-DC Converters

Weight: 0.008 grams (Approximate)

Power-Management Functions

Battery-Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, and so on

SOT23

Top View

Pin Configuration

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN30H4D1S-7

DMN30H4D1S-13

Case

SOT23

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

3H4 = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: F = 2018)

M = Month (ex: 9 = September)

3H4

Date Code Key

Year

2018

2019

2020

2021

2022

2023

2024

2025

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 7

www.diodes.com

October 2018

DMN30H4D1S

Document number: DS40951 Rev. 4 - 2

12 3 4 5 6 7

中文翻译

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DMN3110S-7	DIODES	获取价格	类型:N沟道;元器件封装:SOT-23;
DMN3112S	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3112S	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
DMN3112S-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3112S-7	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance

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