Datasheet > DMN2104L

DMN2104L

更新时间： 2024-01-03 09:27:07

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
4页	130K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMN2104L 数据手册

DMN2104L

N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: See Diagram

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.008 grams (approximate)

•

53mΩ @V_GS= 4.5V

104mΩ @V_GS= 2.5V

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

SOT-23

Drain

Gate

Source

TOP VIEW

Equivalent Circuit

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

Units

Gate-Source Voltage

±12

4.3

Drain Current (Note 3)

Pulsed Drain Current (Note 4)

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 3)

Symbol

Value

1.4

Units

P_D

Thermal Resistance, Junction to Ambient (Note 3)

Operating and Storage Temperature Range

°C/W

°C

R_θ

-55 to +150

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

⎯

BV_DSS

I_DSS

⎯

500

V_GS= 0V, I_D= 250μA

V_DS= 20V, V_GS= 0V

Zero Gate Voltage Drain Current

Gate-Source Leakage

I_GSS

±100

V_GS= ±12V, V_DS= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.45

1.4

V_GS(th)

⎯

V_DS= V_GS, I_D= 250μA

V_GS= 4.5V, I_D= 4.2A

104

Static Drain-Source On-Resistance

R_{DS (ON)}

⎯

mΩ

V_GS= 2.5V, I_D= 3.1A

V_DS=5V, I_D= 4.2A

V_GS= 0V, I_S= 1.0A

Forward Transfer Admittance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

6.6

0.7

|Y_fs|

V_SD

⎯

1.2

325

C_iss

C_oss

C_rss

⎯

_DS= 10V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Notes:

1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R_θJA= 90°C/W.

4. Repetitive rating, pulse width limited by junction temperature.

5. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

October 2008

DMN2104L

Document number: DS31560 Rev. 1 - 2

12 3 4

中文翻译

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