Datasheet > DMN2112SN

DMN2112SN

更新时间： 2024-09-23 12:53:07

品牌	Logo	应用领域
TYSEMI		晶体晶体管
页数	文件大小	规格书
1页	163K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMN2112SN 数据手册

Product specification

DMN2112SN

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Mechanical Data

•

Low On-Resistance

Ideal for Notebook Computer, Portable Phone, PCMCIA

Cards, and Battery Powered Circuits

•

Case: SC59

Case Material - Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Lead Free By Design/RoHS Compliant (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

ESD Protected Gate

•

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.014 grams (approximate)

•

"Green" Device (Note 3)

Drain

SC59

Gate

Protection

Diode

ESD Protected

TOP VIEW

Source

TOP VIEW

Pin Out Configuration

EQUIVALENT CIRCUIT

Maximum Ratings ^@T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_DSS

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Continuous

± 8

V_GSS

Continuous

Pulsed

1.2

4.0

I_D

Thermal Characteristics ^@T_A= 25°C unless otherwise specified

Characteristic

Symbol

P_d

R_θ

Value

500

Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

250

°C /W

°C

-55 to +150

T_j, T_STG

Electrical Characteristics ^@T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 1)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

⎯

BV_DSS

I_DSS

⎯

V_GS= 0V, I_D= 250µA

V_DS= 20V, V_GS= 0V

V_GS= ± 8V, V_DS= 0V

µA

Zero Gate Voltage Drain Current

Gate-Body Leakage

@ T_j= 25°C

I_GSS

± 10

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

0.5

1.2

V_GS(th)

⎯

V_DS= 10V, I_D= 1.0mA

V_GS= 4.5V, I_D= 0.5A

V_GS= 2.5V, I_D= 0.5A

V_GS= 1.5V, I_D= 0.1A

V_DS= 10V, I_D=0.5A

V_GS= 0V, I_S= 1A

0.10

0.14

0.25

Static Drain-Source On-Resistance

R_{DS (ON)}

⎯

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS

Input Capacitance

4.2

0.8

IY_fsI

V_SD

⎯

1.1

220

120

C_iss

C_oss

C_rss

⎯

V_DS= 10V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

⎯

Turn-Off Delay Time

t_D(OFF)

V_DD= 5V, I_D= 0.5A,

V_GS= 10V, R_GEN= 50Ω

Turn-On Rise Time

t_r

t_f

Turn-Off Fall Time

Notes:

1. Pulse width ≤ 300μs, duty cycle ≤ 2%.

2. No purposefully added lead.

http://www.twtysemi.com

sales@twtysemi.com

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