5秒后页面跳转
捷配首页

Datasheet > DMN2170U-7-F
DMN2170U-7-F PDF预览

DMN2170U-7-F

更新时间： 2024-11-24 12:56:15
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 281K
描述
Product specification

阅读下载

中文翻译

获取价格

DMN2170U-7-F 数据手册

  
Product specification  
DMN2170U  
Features  
Mechanical Data  
•
Low On-Resistance  
•
•
Case: SOT-23  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Finish ⎯ Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
•
•
•
70mΩ @VGS = 4.5V  
100mΩ @VGS = 2.5V  
170mΩ @VGS = 1.5V  
•
•
•
•
•
•
•
Very Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 2, 3 and 6)  
•
Weight: 0.008 grams (approximate)  
•
•
Qualified to AEC-Q101 Standards for High Reliability  
ESD Protected Gate  
Drain  
SOT-23  
D
Gate  
Gate  
S
G
ESD PROTECTED TO 3kV  
TOP VIEW  
Protection  
Diode  
Source  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
Value  
20  
Units  
V
V
A
A
VDSS  
VGSS  
ID  
Gate-Source Voltage  
±12  
2.3  
8
Drain Current  
Pulsed Drain Current  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation  
Symbol  
Value  
600  
Units  
mW  
°C/W  
°C  
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
208  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol Min  
Typ Max Unit  
Test Condition  
VGS = 0V, ID = 10μA  
20  
⎯
⎯
28  
⎯
⎯
V
BVDSS  
IDSS  
⎯
1
μA  
μA  
V
V
DS = 20V, VGS = 0V  
IGSS  
±10  
GS = ±12V, VDS = 0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
0.45  
1.0  
V
VGS(th)  
⎯
V
DS = VGS, ID = 250μA  
VGS = 4.5V, ID = 3A  
mΩ VGS = 2.5V, ID = 2.3A  
GS = 1.5V, ID = 0.5A  
50  
70  
125  
70  
100  
170  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
V
Forward Transfer Admittance  
Diode Forward Voltage  
6
S
V
|Yfs|  
VSD  
⎯
⎯
⎯
0.9  
VDS =5V, ID = 2.4A  
VGS = 0V, IS = 1.05A  
0.7  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
217  
62  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 10V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
34  
1 of 1  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
1

中文翻译

下载PDF

与DMN2170U-7-F相关器件

型号 品牌 获取价格 描述 数据表
DMN21D1UDA DIODES

获取价格

 		70V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN21D1UDA-7B DIODES

获取价格

 		Small Signal Field-Effect Transistor,
DMN21D2UFB DIODES

获取价格

 		20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN21D2UFB_15 DIODES

获取价格

 		20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2215UDM DIODES

获取价格

 		DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2215UDM-7 DIODES

获取价格

 		DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2230U TYSEMI

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMN2230U DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2230U-7 TYSEMI

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMN2230U-7 DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

与DMN2170U-7-F相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证