DMN2215UDM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
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Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
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100mΩ @VGS = 4.5V, ID = 2.5A
140mΩ @VGS = 2.5V, ID = 1.5A
215mΩ @VGS = 1.8V, ID = 1A
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Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate to 2kV HBM
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
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Qualified to AEC-Q101 Standards for High Reliability
D1
G1
SOT-26
S1
D2
S2
G2
TOP VIEW
Schematic and Pin Configuration
ESD PROTECTED TO 2kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Units
V
V
Gate-Source Voltage
±12
VGSS
T
A = 25°C
2.0
1.4
Drain Current (Note 1)
A
A
ID
TA = 85°C
Pulsed Drain Current ( Note 4)
7.0
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
PD
Rθ
Value
650
Units
mW
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
192
JA
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Pulse width ≤ 10μs, duty cycle ≤ 1%.
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www.diodes.com
June 2008
© Diodes Incorporated
DMN2215UDM
Document number: DS31176 Rev. 4 - 2