Datasheet > DMN2310UFB4

DMN2310UFB4

更新时间： 2024-11-25 14:55:55

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	471K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN2310UFB4 数据手册

DMN2310UFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Footprint of Just 0.6mm²– Thirteen Times Smaller than SOT23

0.4mm Profile – Ideal for Low Profile Applications

Low Gate Threshold Voltage

I_D

BV_DSS

R_DS(ON)

T_A= +25°C

2.1A

1.7A

1.5A

1.2A

175mΩ @ V_GS= 4.5V

240mΩ @ V_GS= 2.5V

360mΩ @ V_GS= 1.8V

500mΩ @ V_GS= 1.5V

Fast Switching Speed

ESD Protected Gate

20V

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change

control (i.e. parts qualified to AEC-Q100/101/200, PPAP

capable, and manufactured in IATF 16949 certified facilities),

please contact us or your local Diodes representative.

https://www.diodes.com/quality/product-definitions/

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) yet maintain superior switching performance, making it ideal

for high efficiency power management applications.

Mechanical Data



Case: X2-DFN1006-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper Leadframe. Solderable



Load Switch



per MIL-STD-202, Method 208



Weight: 0.001 grams (Approximate)

X2-DFN1006-3

ESD Protected Gate

Gate Protection

Diode

Top View

Internal Schematic

Bottom View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN2310UFB4-7B

Marking

Reel Size (inches)

Tape Width (mm)

Tape Pitch (mm)

Quantity per Reel

10,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Top View

Bar Denotes Gate and Source Side

4B = Part Marking Code

DMN2310UFB4-7B

1 of 7

www.diodes.com

October 2020

DMN2310UFB4

Document number: DS42733 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

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与DMN2310UFB4相关器件

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DMN2310UFD	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2310UT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2310UTQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2310UW	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2310UWQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2320UFB4	DIODES	获取价格	Fast Switching Speed
DMN2320UFB4_15	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2320UFB4-7B	DIODES	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-o
DMN2400UFB	DIODES	获取价格	N-Channel Mosfet
DMN2400UFB4	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

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