DMN2250UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
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Low On-Resistance
ID
V(BR)DSS
RDS(on) max
Very Low Gate Threshold Voltage VGS(TH), 1.0V max
Low Input Capacitance
Fast Switching Speed
TA = +25°C
1.35A
1.15A
1.10A
0.17Ω @ VGS = 4.5V
0.23Ω @ VGS = 2.5V
0.25Ω @ VGS = 1.8V
20V
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
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Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
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Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
e4
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DC-DC Converters
Power Management Functions
per MIL-STD-202, Method 208
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Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Body
Diode
Gate
S
D
Gate
Protection
Diode
G
Source
Bottom View
Top View
Internal Schematic
ESD PROTECTED
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2250UFB-7B
Case
X1-DFN1006-3
Packaging
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Z5 = Product Type Marking Code
Bar Denotes Gate and Source Side
Z5
Top View
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www.diodes.com
February 2013
© Diodes Incorporated
DMN2250UFB
Document number: DS36035 Rev. 3 - 2