Datasheet > DMN2310UW

DMN2310UW

更新时间： 2024-11-21 14:53:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	356K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2310UW 数据手册

DMN2310UW

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

I_DMax

•

Low On-Resistance

BV_DSS

R_DS(ON)Max

T_A= +25°C

Low Input Capacitance

Fast Switching Speed

200mΩ @ V_GS= 4.5V

280mΩ @ V_GS= 2.5V

1.3A

1.1A

20V

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen- and Antimony-Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description and Applications

Mechanical Data

This MOSFET has been designed to minimize on-state resistance

(R_DS(ON)) yet maintain superior switching performance, making it ideal

for high-efficiency power management applications.

•

Case: SOT323

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See Diagram

Terminals: FinishMatte Tin Annealed over Copper Lead-Frame.

Solderable per MIL-STD-202, Method 208

Weight: 0.027 grams (Approximate)

•

General Purpose Interfacing Switch

Power Management Functions

DC-DC Converters

Analog Switch

•

SOT323

ESD PROTECTED

Equivalent Circuit

Top View

Ordering Information (Note 4)

Part Number

DMN2310UW-7

DMN2310UW-13

Case

SOT323

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

BE4 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: H = 2020)

M = Month (ex: 9 = September)

Date Code Key

Year

2020

2021

2022

2023

2024

2025

2026

2027

2028

2029

2030

2031

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 7

www.diodes.com

August 2020

DMN2310UW

Document number: DS42639 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

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与DMN2310UW相关器件

型号	品牌	获取价格	描述	数据表
DMN2310UWQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2320UFB4	DIODES	获取价格	Fast Switching Speed
DMN2320UFB4_15	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2320UFB4-7B	DIODES	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-o
DMN2400UFB	DIODES	获取价格	N-Channel Mosfet
DMN2400UFB4	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2400UFB4-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2400UFB4-7R	DIODES	获取价格	Small Signal Field-Effect Transistor,
DMN2400UFB-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
DMN2400UFB-7B	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Meta

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