Datasheet > DMN2400UV

DMN2400UV

更新时间： 2024-11-24 09:54:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	150K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMN2400UV 数据手册

DMN2400UV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected up to 2kV

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 standards for High Reliability

•

Case: SOT-563

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

Weight: 0.006 grams (approximate)

G₁

S₁

D₂

SOT-563

G₂

S₂

D₁

Top View

Internal Schematic

Top View

Bottom View

ESD PROTECTED TO 2kV

Ordering Information (Note 3)

Part Number

DMN2400UV-7

DMN2400UV-13

Case

SOT-563

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

24N = Marking Code

YM = Date Code Marking

Y = Year (ex: W = 2009)

M = Month (ex: 9 = September)

24N

Date Code Key

Year

2009

2010

2011

2012

2013

2014

2015

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

January 2011

DMN2400UV

Document number: DS31852 Rev. 6 - 2

12 3 4 5 6

中文翻译

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