Datasheet > DMN2501UFB4

DMN2501UFB4

更新时间： 2024-11-14 01:03:03

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	607K
描述
Low On-Resistance

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN2501UFB4 数据手册

DMN2501UFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

I_D

V_(BR)DSS

R_{DS(on) max}

Very Low Gate Threshold Voltage V_GS(TH), 1.0V Max.

Low Input Capacitance

T_A= +25°C

1.5A

0.4Ω @ V_GS= 4.5V

0.5 Ω @ V_GS= 2.5V

0.7 Ω @ V_GS= 1.8V

Fast Switching Speed

20V

1.3A

1.1A

Ultra-Small Surfaced Mount Package

Ultra-Low Package Profile, 0.4mm Maximum Package Height

ESD Protected Gate

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

Mechanical Data

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(on)) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.



Case: X2-DFN1006-3

Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram



DC-DC Converters

Power Management Functions

Terminals: Finish – NiPdAu over Copper Leadframe; Solderable

per MIL-STD-202, Method 208



Weight: 0.001 grams (Approximate)

Drain

X2-DFN1006-3

Body

Diode

Gate

Protection

Diode

Source

Bottom View

Top View

Internal Schematic

ESD PROTECTED

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN2501UFB4-7

DMN2501UFB4-7B

Case

X2-DFN1006-3

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"

and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

1 of 7

www.diodes.com

May 2015

DMN2501UFB4

Document number: DS35824 Rev. 5 - 2

12 3 4 5 6 7

中文翻译

下载PDF

与DMN2501UFB4相关器件

型号	品牌	获取价格	描述	数据表
DMN2501UFB4_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2501UFB4-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2501UFB4-7B	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2550UFA	DIODES	获取价格	Low On-Resistance
DMN2550UFA_15	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2550UFA-7B	DIODES	获取价格	Low On-Resistance
DMN25D0UFA	DIODES	获取价格	N-Channel Mosfet
DMN25D0UFA-7B	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.24A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
DMN2600UFB	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2600UFB-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET