Datasheet > DMN2600UFB

DMN2600UFB

更新时间： 2024-11-13 09:54:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	137K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN2600UFB 数据手册

DMN2600UFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance

Low Gate Threshold Voltage

Fast Switching Speed

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

ESD Protected Gate 1kV

Qualified to AEC-Q101 Standards for High Reliability

•

Case: DFN1006-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

Marking Information: See Page 5

Ordering Information: See Page 5

Weight: 0.001 grams (approximate)

•

DFN1006-3

Drain

Body

Diode

Gate

Protection

Source

Diode

Bottom View

Top View

Internal Schematic

ESD PROTECTED TO 1kV

Equivalent Circuit

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±8

V_GSS

T_A= 25°C

T_A= 85°C

Steady

State

1.3

0.9

Continuous Drain Current (Note 3)

Pulsed Drain Current

I_D

3.0

I_DM

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Power Dissipation (Note 3)

Symbol

Value

0.54

Unit

P_D

234

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J, T_STG

Notes:

1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php

3. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout.

1 of 6

www.diodes.com

July 2010

DMN2600UFB

Document number: DS31983 Rev. 3 - 2

12 3 4 5 6

中文翻译

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