Datasheet > DMN2990UFA

DMN2990UFA

更新时间： 2024-01-31 22:10:25

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	144K
描述
Low On-Resistance

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中文翻译

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数据手册

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DMN2990UFA 数据手册

DMN2990UFA

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low Package Profile, 0.4mm Maximum Package height

0.48mm²package footprint, 16 times smaller than SOT23

Low On-Resistance

_Dmax

V_(BR)DSS

R_DS(ON)max

T_A= +25°C

510mA

0.99Ω @ V_GS= 4.5V

1.2Ω @ V_GS= 2.5V

1.8Ω @ V_GS= 1.8V

2.4Ω @ V_GS= 1.5V

Very low Gate Threshold Voltage, 1.0V max

ESD Protected Gate

470mA

20V

380mA

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

330mA

Description

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.



Case: X2-DFN0806-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper leadframe.

Applications



General Purpose Interfacing Switch

Power Management Functions

Analog Switch

Solderable per MIL-STD-202, Method 208

Weight: 0.001 grams (approximate)



Drain

Body

Diode

Gate

Protection

Diode

Source

Top View

Package Pin Configuration

ESD PROTECTED

Equivalent Circuit

Bottom View

Ordering Information (Note 4)

Part Number

Case

Packaging

10K/Tape & Reel

DMN2990UFA-7B

X2-DFN0806-3

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN2990UFA-7B

NW = Product Type Marking Code

Top View

Bar Denotes Gate

and Source Side

1 of 6

www.diodes.com

June 2013

DMN2990UFA

Document number: DS35765 Rev. 3 - 2

12 3 4 5 6

中文翻译

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与DMN2990UFA相关器件

型号	品牌	获取价格	描述	数据表
DMN2990UFA_15	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UFA-7B	DIODES	获取价格	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
DMN2990UFB	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UFO	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UFZ	DIODES	获取价格	Low On-Resistance
DMN2990UFZ_15	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UFZ-7B	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
DMN2991UDA	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UDA-7B	DIODES	获取价格	Small Signal Field-Effect Transistor,
DMN2991UDJ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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