Datasheet > DMN3008SCP10

DMN3008SCP10

更新时间： 2023-12-06 20:11:06

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
9页	541K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3008SCP10 数据手册

DMN3008SCP10

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Product Summary

Features



Built-in G-S Protection Diode Against ESD 2kV HBM.

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

I_S

BV_SSS

R_{SS(ON) MAX}

T_A= +25°C

30V

14.6A

7.8mΩ @ V_GS=10V

Mechanical Data

Description



Case: X4-DSN3415-10

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

This new generation MOSFET has been designed to minimize the

on-state resistance (R_SS(ON)) with a 3.37mm x 1.47mm x 0.2mm size

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications



Battery Management

Load Switch

Battery Protection

ESD PROTECTED TO 2kV

N-Channel

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN3008SCP10-7

Case

X4-DSN3415-10

Packaging

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

4A = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: E = 2017)

M or M = Month (ex: 9 = September)

Date Code Key

Year

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Month

Code

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www.diodes.com

March 2017

DMN3008SCP10

Document number: DS39198 Rev. 2 - 2

12 3 4 5 6 7...9

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