5秒后页面跳转
DMN3007LSS-13 PDF预览

DMN3007LSS-13

更新时间: 2024-01-14 23:25:20
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
5页 150K
描述
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

DMN3007LSS-13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOT
包装说明:GREEN, PLASTIC, SOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:441039
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (8-Pin)Samacsys Footprint Name:SOP-8L
Samacsys Released Date:2018-02-02 03:46:13Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):16 A
最大漏极电流 (ID):16 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):64 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMN3007LSS-13 数据手册

 浏览型号DMN3007LSS-13的Datasheet PDF文件第2页浏览型号DMN3007LSS-13的Datasheet PDF文件第3页浏览型号DMN3007LSS-13的Datasheet PDF文件第4页浏览型号DMN3007LSS-13的Datasheet PDF文件第5页 
DMN3007LSS  
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
Low On-Resistance  
Case: SO-8  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper lead  
frame. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072g (approximate)  
7m@ VGS = 10V  
10m@ VGS = 4.5V  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
SO-8  
S
D
S
S
G
D
D
D
Top View  
Internal Schematic  
Top View  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
30  
Units  
V
V
Gate-Source Voltage  
VGSS  
±20  
T
A = 25°C  
Drain Current (Note 1)  
Steady  
State  
16  
13  
A
A
ID  
TA = 70°C  
Pulsed Drain Current (Note 3)  
64  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
2.5  
Unit  
W
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
50  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
T
J, TSTG  
Notes:  
1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with R  
2. No purposefully added lead.  
= 50°C  
JA  
θ
3. Pulse width 10μS, Duty Cycle 1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 5  
www.diodes.com  
April 2010  
© Diodes Incorporated  
DMN3007LSS  
Document number: DS31460 Rev. 5 - 2  

与DMN3007LSS-13相关器件

型号 品牌 描述 获取价格 数据表
DMN3008SCP10 DIODES 30V N-CHANNEL ENHANCEMENT MODE MOSFET

获取价格

DMN3008SFG DIODES Qualified to AEC-Q101 Standards for High Reliability

获取价格

DMN3008SFG_15 DIODES 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

获取价格

DMN3008SFG-13 DIODES 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

获取价格

DMN3008SFG-7 DIODES Small Signal Field-Effect Transistor

获取价格

DMN3008SFGQ DIODES 30V N-CHANNEL ENHANCEMENT MODE MOSFET

获取价格