Datasheet > DMN2991UFB4

DMN2991UFB4

更新时间： 2023-12-06 20:01:44

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	700K
描述
20V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMN2991UFB4 数据手册

DMN2991UFB4

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Footprint of Just 0.6mm²– Thirteen Times Smaller than SOT23

0.4mm Profile – Ideal for Low Profile Applications

Low Gate Threshold Voltage

I_DMax

T_A= +25°C

BV_DSS

R_DS(ON)Max

0.5A

0.99Ω @ V_GS= 4.5V

1.2Ω @ V_GS= 2.5V

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,

and manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

20V

0.37A

1.8Ω @ V_GS= 1.8V

Description and Applications

Mechanical Data

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) yet maintain superior switching performance, making it ideal

for high-efficiency power-management applications.



Package: X2-DFN1006-3

Package Material: Molded Plastic, "Green" Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020



Load switches

Terminals: Finish – NiPdAu over Copper Leadframe; Solderable

per MIL-STD-202, Method 208



Weight: 0.001 grams (Approximate)

X2-DFN1006-3

Bottom View

Gate Protection

Diode

Top View

Internal Schematic

Equivalent Circuit

ESD Protected Gate

Ordering Information (Note 4)

Packing

Carrier

Part Number

Package

Qty.

DMN2991UFB4-7B

X2-DFN1006-3

10,000

Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Top View

Bar Denotes Gate and Source Side

BS = Product Type Marking Code

DMN2991UFB4-7B

1 of 7

www.diodes.com

April 2022

DMN2991UFB4

Document number: DS44483 Rev. 4 - 2

12 3 4 5 6 7

中文翻译

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与DMN2991UFB4相关器件

型号	品牌	获取价格	描述	数据表
DMN2991UFB4Q	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UFO	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UFZ	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UFZ-7B	DIODES	获取价格	Small Signal Field-Effect Transistor,
DMN2991UFZQ	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2991UTQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2992UFB4	DIODES	获取价格	20V N-Channel Enhancement Mode MOSFET
DMN2992UFB4Q	DIODES	获取价格	20V N-Channel Enhancement Mode MOSFET
DMN2992UFZ	DIODES	获取价格	20V N-Channel Enhancement Mode MOSFET

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