DMN2990UFO
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Package Profile
ID max
BVDSS
RDS(ON) max
0.6mm x 0.4mm Package Footprint
Low On-Resistance
TA = +25°C
0.99Ω @ VGS = 4.5V
1.2Ω @ VGS = 2.5V
1.8Ω @ VGS = 1.8V
2.4Ω @ VGS = 1.5V
750mA
680mA
555mA
471mA
Very Low Gate Threshold Voltage, 1.0V Max
ESD Protected Gate
20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description and Applications
Case: X2-DFN0604-3
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
X2-DFN0604-3
S
D
G
ESD PROTECTED
Top View
Package Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
Packaging
10k/Tape & Reel
DMN2990UFO-7B
X2-DFN0604-3
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
4N = Product Type Marking Code
4N
Top View
Bar Denotes Gate
and Source Side
1 of 7
www.diodes.com
January 2019
© Diodes Incorporated
DMN2990UFO
Document number: DS39088 Rev. 5 - 2