Datasheet > DMN2710UV

DMN2710UV

更新时间： 2023-12-06 20:01:10

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	423K
描述
Dual N-Channel Enhancement Mode MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN2710UV 数据手册

DMN2710UV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

Low Gate Threshold Voltage V_GS(TH)< 1V

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

BV_DSS

R_DS(ON)

I_D@T_A= +25°C

0.92A

0.45Ω @V_GS= 4.5V

0.6Ω @V_GS= 2.5V

20V

0.8A

Ultra-Small Surface Mount Package

ESD Protected Gate

Description

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,

and manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(ON)yet maintain superior switching

)

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

Applications



Package: SOT563



Battery operated systems and solid-state relays

Drivers: relays, solenoids, lamps, hammers, displays, memories,

transistors, etc.

Package Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.006 grams (Approximate)



Power supply converter circuits



SOT563

ESD PROTECTED

Bottom View

Top View

Internal Schematic

Ordering Information (Note 4)

Packing

Part Number

Package

Qty.

Carrier

Tape & Reel

DMN2710UV-7

SOT563

3,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

BG6 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: J = 2022)

M = Month (ex: 9 = September)

Date Code Key

Year

2022

2023

2024

2025

2026

2027

2028

2029

2030

2031

2032

2033

Code

Aug

Sep

Oct

Nov

Dec

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

1 of 7

www.diodes.com

September 2022

DMN2710UV

Document number: DS44759 Rev. 3 - 2

12 3 4 5 6 7

中文翻译

下载PDF

与DMN2710UV相关器件

型号	品牌	获取价格	描述	数据表
DMN2710UVQ	DIODES	获取价格	Dual N-Channel Enhancement Mode MOSFET
DMN2710UW	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2710UWQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UDJ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UDJ-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UDJQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UFA	DIODES	获取价格	Low On-Resistance
DMN2990UFA_15	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2990UFA-7B	DIODES	获取价格	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
DMN2990UFB	DIODES	获取价格	20V N-CHANNEL ENHANCEMENT MODE MOSFET

与DMN2710UV相关文章

解读BAV99LT1数据手册：产品特性、电气参数及替换型号推荐
2024-06-18

1
资料解析：P82B96TD引脚图说明、电气参数
2024-06-18

1
ATA6621N数据手册解读：产品特性、引脚图信息、电气参数
2024-06-18

4
一文AO3400引脚图、参数、产品特性
2024-06-18

2

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN2710UV

DMN2710UV 数据手册

与DMN2710UV相关器件

与DMN2710UV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN2710UV

DMN2710UV 数据手册

与DMN2710UV相关器件

与DMN2710UV相关文章

您还可以找

您在本页遇到什么问题？