Datasheet > DMN24H11DS_15

DMN24H11DS_15

更新时间： 2024-11-25 01:11:59

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	390K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN24H11DS_15 数据手册

DMN24H11DS

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

Product Summary



Low Gate Threshold Voltage

I_D

V_(BR)DSS

R_DS(ON)

Low Input Capacitance

T_A= +25°C

Fast Switching Speed

0.27A

0.26A

11Ω @ V_GS= 10V

12Ω @ V_GS= 4.5V

240V

Small Surface Mount Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R_DS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data



Case: SOT23

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Applications



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Solderable per MIL-STD-202, Method 208



DC-DC Converters

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Power management functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc



Terminal Connections: See Diagram

Weight: 0.006 grams (approximate)

Top View

Pin Configuration

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN24H11DS-7

DMN24H11DS-13

Case

SOT23

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

4H1 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: Y = 2011)

4H1

M = Month (ex: 9 = September)

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

April 2014

DMN24H11DS

Document number: DS37092 Rev. 3 - 2

12 3 4 5 6

中文翻译

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与DMN24H11DS_15相关器件

型号	品牌	获取价格	描述	数据表
DMN24H11DS-13	DIODES	获取价格	Low Gate Threshold Voltage
DMN24H11DS-7	DIODES	获取价格	Low Gate Threshold Voltage
DMN24H11DSQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN24H3D5L	DIODES	获取价格	Low Gate Threshold Voltage
DMN24H3D5L_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN24H3D5L-13	DIODES	获取价格	Low Gate Threshold Voltage
DMN24H3D5L-7	DIODES	获取价格	Low Gate Threshold Voltage
DMN2500UFB4_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2500UFB4-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2500UFB4-7B	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

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