Datasheet > DMN2300U-7

DMN2300U-7

更新时间： 2024-11-20 12:30:39

品牌	Logo	应用领域
TYSEMI		栅
页数	文件大小	规格书
3页	200K
描述
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV

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DMN2300U-7 数据手册

Product specification

DMN2300U

20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23

Product Summary

Features and Benefits

•

On resistance <200mΩ

Low Gate Threshold Voltage

Fast Switching Speed

“Lead Free”, RoHS Compliant (Note 1)

Halogen and Antimony Free. "Green" Device (Note 2)

ESD Protected Gate 2kV

V_(BR)DSS

R_DS(on)

I_DMax (Note 5)

1.40A @ T_A= 25°C

1.20A @ T_A= 25°C

1.0A @ T_A= 25°C

175mΩ @ V_GS= 4.5V

240mΩ @ V_GS= 2.5V

360mΩ @ V_GS= 1.8V

20V

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

•

Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin

•

Weight: 0.08 grams (approximate)

•

Load switch

Drain

SOT23

Body

Diode

Gate

Protection

Diode

Source

Top View

Equivalent Circuit

Top View

ESD PROTECTED TO 2kV

Ordering Information ^{(Note 3)}

Part Number

DMN2300U-7

Marking

N2U

Reel size (inches)

Tape width (mm)

Quantity per reel

3000

Notes:

1. No purposefully added lead

Marking Information

N2U = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

N2U

M = Month (ex: 9 = September)

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

http://www.twtysemi.com

sales@twtysemi.com

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