5秒后页面跳转
DMN2230U-7 PDF预览

DMN2230U-7

更新时间: 2024-11-20 09:54:11
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
4页 155K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2230U-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:1.64Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:441037
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT23-1
Samacsys Released Date:2019-07-25 02:39:10Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:0.11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):30 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMN2230U-7 数据手册

 浏览型号DMN2230U-7的Datasheet PDF文件第2页浏览型号DMN2230U-7的Datasheet PDF文件第3页浏览型号DMN2230U-7的Datasheet PDF文件第4页 
DMN2230U  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Low On-Resistance  
Case: SOT-23  
110 mΩ @ VGS = 4.5V  
145 mΩ @ VGS = 2.5V  
230 mΩ @ VGS = 1.8V  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Finish Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 2, 3 and 5)  
Qualified to AEC-Q101 Standards for High Reliability  
SOT-23  
D
G
S
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
20  
Units  
V
V
A
A
Gate-Source Voltage  
±12  
2.0  
7
Drain Current (Note 1)  
Pulsed Drain Current (Note 4)  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
600  
Units  
mW  
°C/W  
°C  
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
208  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. Device mounted on FR-4 PCB, or minimum recommended pad layout  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Repetitive rating, pulse width limited by junction temperature.  
5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
June 2008  
© Diodes Incorporated  
DMN2230U  
Document number: DS31180 Rev. 4 - 2  

DMN2230U-7 替代型号

型号 品牌 替代类型 描述 数据表
MMBF170-7-F DIODES

类似代替

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123-7-F DIODES

类似代替

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002K-7 DIODES

类似代替

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

与DMN2230U-7相关器件

型号 品牌 获取价格 描述 数据表
DMN2250UFB DIODES

获取价格

Low On-Resistance
DMN2250UFB_15 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2250UFB-7B DIODES

获取价格

Low On-Resistance
DMN22M5UCA10 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN22M5UFG DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2300U TYSEMI

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV
DMN2300U DIODES

获取价格

N-Channel Mosfet
DMN2300U-7 TYSEMI

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV
DMN2300UFB DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2300UFB4 DIODES

获取价格

20V N-CHANNEL ENHANCEMENT MODE MOSFET