5秒后页面跳转
捷配首页

Datasheet > DMN2170U-7
DMN2170U-7 PDF预览

DMN2170U-7

更新时间： 2024-02-22 17:40:34
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 150K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

阅读下载

中文翻译

获取价格

DMN2170U-7 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.82其他特性：HIGH RELIABILITY
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：2.3 A最大漏极电流 (ID)：2.3 A
最大漏源导通电阻：0.07 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：34 pFJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.6 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DMN2170U-7 数据手册

 浏览型号DMN2170U-7的Datasheet PDF文件第2页浏览型号DMN2170U-7的Datasheet PDF文件第3页浏览型号DMN2170U-7的Datasheet PDF文件第4页 
DMN2170U  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
Low On-Resistance  
•
•
Case: SOT-23  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Finish ⎯ Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering & Date Code Information: See Page 3  
Weight: 0.008 grams (approximate)  
•
•
•
70mΩ @VGS = 4.5V  
100mΩ @VGS = 2.5V  
170mΩ @VGS = 1.5V  
•
•
•
•
•
•
•
Very Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 2, 3 and 6)  
Qualified to AEC-Q101 Standards for High Reliability  
ESD Protected Gate  
•
•
•
•
•
Drain  
SOT-23  
D
Gate  
Gate  
S
G
ESD PROTECTED TO 3kV  
TOP VIEW  
Protection  
Diode  
Source  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
Value  
20  
Units  
V
V
A
A
VDSS  
VGSS  
ID  
Gate-Source Voltage  
±12  
2.3  
8
Drain Current (Note 1)  
Pulsed Drain Current (Note 4)  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
600  
Units  
mW  
°C/W  
°C  
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
208  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Symbol Min  
Typ Max Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
20  
⎯
⎯
28  
⎯
⎯
V
BVDSS  
IDSS  
⎯
1
VGS = 0V, ID = 10μA  
μA VDS = 20V, VGS = 0V  
μA  
IGSS  
±10  
VGS = ±12V, VDS = 0V  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
0.45  
1.0  
V
VGS(th)  
⎯
VDS = VGS, ID = 250μA  
VGS = 4.5V, ID = 3A  
50  
70  
125  
70  
100  
170  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
mΩ VGS = 2.5V, ID = 2.3A  
GS = 1.5V, ID = 0.5A  
V
Forward Transfer Admittance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
6
S
V
|Yfs|  
VSD  
⎯
⎯
⎯
0.9  
VDS =5V, ID = 2.4A  
VGS = 0V, IS = 1.05A  
0.7  
217  
62  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 10V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
34  
Notes:  
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Repetitive rating, pulse width limited by junction temperature.  
5. Short duration pulse test used to minimize self-heating effect.  
6. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
June 2008  
© Diodes Incorporated  
DMN2170U  
Document number: DS31182 Rev. 4 - 2  
1234

中文翻译

下载PDF

与DMN2170U-7相关器件

型号 品牌 获取价格 描述 数据表
DMN2170U-7-F TYSEMI

获取价格

 		Product specification
DMN21D1UDA DIODES

获取价格

 		70V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN21D1UDA-7B DIODES

获取价格

 		Small Signal Field-Effect Transistor,
DMN21D2UFB DIODES

获取价格

 		20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN21D2UFB_15 DIODES

获取价格

 		20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2215UDM DIODES

获取价格

 		DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2215UDM-7 DIODES

获取价格

 		DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2230U TYSEMI

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMN2230U DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2230U-7 TYSEMI

获取价格

 		N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance

与DMN2170U-7相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证