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DMN2112SN PDF预览

DMN2112SN

更新时间： 2024-09-23 03:30:07
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 223K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMN2112SN 数据手册

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DMN2112SN  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
A
•
•
Low On-Resistance  
Ideal for Notebook Computer, Portable Phone, PCMCIA  
Cards, and Battery Powered Circuits  
SC-59  
D
Dim  
A
B
C
D
E
Min  
0.30  
1.40  
2.50  
0.85  
0.30  
1.70  
2.70  
⎯
Max  
0.50  
1.80  
3.00  
1.05  
0.70  
2.10  
3.10  
0.10  
1.40  
0.70  
0.35  
8°  
B
C
•
•
•
•
Lead Free By Design/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
ESD Protected Gate  
TOP VIEW  
S
G
D
G
E
"Green" Device (Note 3)  
H
Mechanical Data  
•
•
K
M
G
H
J
Case: SC-59  
J
L
Case Material - Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Drain  
•
•
K
L
1.00  
0.55  
0.10  
0°  
Gate  
•
•
•
•
M
α
Gate  
Protection  
Diode  
Source  
Ordering & Date Code Information: See Page 3  
Weight: 0.008 grams (approximate)  
All Dimensions in mm  
ESD Protected  
EQUIVALENT CIRCUIT  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VDSS  
VGSS  
Value  
20  
± 8  
1.2  
4.0  
500  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Continuous  
Continuous  
Pulsed  
A
ID  
Total Power Dissipation  
mW  
°C /W  
°C  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
250  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 1)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
20  
⎯
⎯
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
10  
VGS = 0V, ID = 250µA  
µA  
µA  
VDS = 20V, VGS = 0V  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
@ Tj = 25°C  
IGSS  
± 10  
VGS = ± 8V, VDS = 0V  
ON CHARACTERISTICS (Note 1)  
Gate Threshold Voltage  
0.5  
1.2  
V
VGS(th)  
⎯
⎯
VDS = 10V, ID = 1.0mA  
VGS = 4.5V, ID = 0.5A  
VGS = 2.5V, ID = 0.5A  
VGS = 1.5V, ID = 0.1A  
0.10  
0.14  
0.25  
Static Drain-Source On-Resistance  
RDS (ON)  
⎯
Ω
Forward Transfer Admittance  
Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
4.2  
0.8  
S
V
IYfsI  
VSD  
⎯
⎯
⎯
1.1  
VDS = 10V, ID =0.5A  
V
GS = 0V, IS = 1A  
220  
120  
45  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 10V, VGS = 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
10  
75  
15  
65  
ns  
ns  
ns  
ns  
tD(ON)  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Turn-Off Delay Time  
tD(OFF)  
VDD = 5V, ID = 0.5A,  
VGS = 10V, RGEN = 50Ω  
Turn-On Rise Time  
tr  
tf  
Turn-Off Fall Time  
Notes:  
1. Pulse width ≤ 300μs, duty cycle ≤ 2%.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
DS30830 Rev. 3 - 2  
1 of 3  
DMN2112SN  
© Diodes Incorporated  
www.diodes.com  
123

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