Product specification
DMN2114SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
Features
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Low On-Resistance
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Power Circuits
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Case: SC59
Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
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•
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Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
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Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
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"Green" Device (Note 3)
Drain
SC-59
D
Gate
TOP VIEW
ESD protected
S
G
Gate
Protection
Diode
Source
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
20
Unit
V
Drain-Source Voltage
VDSS
VGSS
Gate-Source Voltage
Drain Current
Continuous
Continuous
Pulsed
V
±12
1.2
4.0
A
ID
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
500
Unit
mW
Total Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
250
°C /W
°C
Rθ
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
10
VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±12V, VDS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ Tj = 25°C
μA
μA
IGSS
±10
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
0.7
1.40
V
VGS(th)
⎯
VDS = 10V, ID = 1.0mA
V
GS = 4.5V, ID = 0.5A
⎯
⎯
⎯
⎯
⎯
⎯
3.3
0.100
0.160
Static Drain-Source On-Resistance
RDS (ON)
Ω
VGS = 2.5V, ID = 0.5A
VDS = 10V, ID = 0.5A
VGS = 0V, IS = 1.0A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
S
V
|Yfs|
VSD
⎯
1.1
0.8
180
120
45
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
10
50
15
45
ns
ns
ns
ns
tD(ON)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Turn-Off Delay Time
tD(OFF)
V
DD = 10V, ID = 0.5A,
Turn-On Rise Time
VGS = 5.0V, RGEN = 50Ω
tr
tf
Turn-Off Fall Time
Notes:
1. Pulse width ≤300μS, duty cycle ≤2%.
2. No purposefully added lead.
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