Datasheet > DIM2400ESS12

DIM2400ESS12

更新时间： 2024-11-23 03:29:43

品牌	Logo	应用领域
DYNEX		开关双极性晶体管
页数	文件大小	规格书
9页	814K
描述
Single Switch IGBT Module

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中文翻译

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数据手册

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DIM2400ESS12 数据手册

DIM2400ESS12-A000

Single Switch IGBT Module

DS5840-1.1 June 2005 (LN24075)

KEY PARAMETERS

FEATURES

V_CES

V_{CE (sat)}

I_C

1200V

2.2V

2400A

4800A

(typ)

(max)

•

10µs Short Circuit Withstand

Non Punch Through Silicon

Isolated Copper Base plate

Lead Free construction

I_C(PK)

^*(measured at the power busbars and not the auxiliary terminals)

APPLICATIONS

•

High Power Inverters

Motor Controllers

The Powerline range of high power modules

includes half bridge, chopper, dual, single and bi-

directional switch configurations covering voltages

from 600V to 3300V and currents up to 3600A.

The DIM2400ESS12-A000 is a single switch 1200V,

n channel enhancement mode, insulated gate

bipolar transistor (IGBT) module. The IGBT has a

wide reverse bias safe operating area (RBSOA) plus

full 10µs short circuit withstand.

Fig. 1 Single switch circuit diagram

The module incorporates an electrically isolated

base plate and low inductance construction enabling

circuit designers to optimise circuit layouts and

utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM2400ESS12-A000

Note: When ordering, please use the whole part number.

Outline type code: E

(See package details for further information)

Fig. 2 Package

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/9

www.dynexsemi.com

12 3 4 5 6 7...9

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