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DIM300WHS12-A PDF预览

DIM300WHS12-A

更新时间: 2024-01-20 00:40:55
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
8页 167K
描述
IGBT Modules - Half Bridge

DIM300WHS12-A 数据手册

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DIM300WHS12-A000  
Half Bridge IGBT Module  
Replaces January 2004 version, issue PDS5691-1.4  
PDS5691-2.0 February 2004  
FEATURES  
KEY PARAMETERS  
VCES  
VCE(sat)  
IC  
1200V  
2.2V  
300A  
600A  
I 10µs Short Circuit Withstand  
I Non Punch Through Silicon  
I Isolated Copper Baseplate  
*
(typ)  
(max)  
(max)  
IC(PK)  
*(measured at the power busbars and not the auxiliary terminals)  
APPLICATIONS  
I Inverters  
I Motor Controllers  
7(E2)  
6(G2)  
1(E1C2)  
2(E2)  
3(C1)  
The Powerline range of high power modules includes half  
bridge, chopper, dual, single and bi-directional switch  
configurations covering voltages from 600V to 3300V and  
currents up to 3600A.  
4(G1)  
5(E1)  
The DIM300WHS12-A000 is a half bridge switch 1200V, n  
channel enhancement mode, insulated gate bipolar transistor  
(IGBT) module. The IGBT has a wide reverse bias safe  
operating area (RBSOA) plus full 10µs short circuit withstand.  
Fig. 1 Half bridge circuit diagram  
The module incorporates an electrically isolated base plate  
and low inductance construction enabling circuit designers to  
optimise circuit layouts and utilise grounded heat sinks for safety.  
ORDERING INFORMATION  
Order As:  
DIM300WHS12-A000  
Note: When ordering, please use the whole part number.  
Outline type code: W  
(See package details for further information)  
Fig. 2 Electrical connections - (not to scale)  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
1/8  
www.dynexsemi.com  

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