Datasheet > DIM300WHS17-A

DIM300WHS17-A

更新时间： 2024-02-07 21:32:03

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
8页	143K
描述
IGBT Modules - Half Bridge

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数据手册

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DIM300WHS17-A 数据手册

DIM300WHS17-A000

Half Bridge IGBT Module

FDS5694-1.2 December 2003

FEATURES

KEY PARAMETERS

V_CES

V_CE(sat)

I_C

1700V

2.7V

300A

600A

I 10µs Short Circuit Withstand

I Non Punch Through Silicon

I Isolated Copper Baseplate

(typ)

(max)

I_C(PK)

*(measured at the power busbars and not the auxiliary terminals)

APPLICATIONS

I Inverters

I Motor Controllers

7(E²)

6(G²)

The Powerline range of high power modules includes half

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 3600A.

1(E1C2)

2(E2)

3(C1)

4(G¹)

5(E¹)

The DIM300WHS17-A000 is a half bridge switch 1700V, n

channel enhancement mode, insulated gate bipolar transistor

(IGBT) module. The IGBT has a wide reverse bias safe

operating area (RBSOA) plus full 10µs short circuit withstand.

Fig. 1 Half bridge circuit diagram

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM300WHS17-A000

Note: When ordering, please use the whole part number.

Outline type code: W

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/8

www.dynexsemi.com

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