Datasheet > DIM375WHS06-S

DIM375WHS06-S

更新时间： 2024-01-07 09:37:54

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
8页	150K
描述
IGBT Modules - Half Bridge

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数据手册

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DIM375WHS06-S 数据手册

DIM375WHS06-S000

Half Bridge IGBT Module

Replaces version December 2003, issue DS5675-2.2

DS5675-3.3 February 2004

FEATURES

KEY PARAMETERS

Low Forward Voltage Drop

V_CES

600V

2.1V

Isolated Copper Baseplate

V_CE(sat)* (typ)

I_C

(max) 375A

(max) 750A

APPLICATIONS

I Inverters

I_C(PK)

*(measured at the power busbars and not the auxiliary terminals)

I Motor Controllers

7(E²)

6(G²)

The Powerline range of modules includes half bridge,

chopper, bi-directional, dual and single switch configurations

covering voltages from 600V to 3300V and currents up to 3600A.

The DIM375WHS06-S000 is a half bridge 600V n channel

enhancement mode insulated gate bipolar transistor (IGBT)

module. The module is suitable for a variety of medium voltage

applications in motor drives and power conversion.

1(E1C2)

2(E2)

3(C1)

4(G¹)

5(E¹)

The IGBT has a wide reverse bias safe operating area

(RBSOA) for ultimate reliability in demanding applications.

These modules incorporate electrically isolated base plates

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

Fig. 1 Half bridge circuit diagram

Typical applications include dc motor drives, ac pwm

drivesand ups systems..

ORDERING INFORMATION

Order as: DIM375WHS06-S000

Note: When ordering, use complete part number.

Outline type code: W

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/8

www.dynexsemi.com

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