Datasheet > DIM400BSS12-A

DIM400BSS12-A

更新时间： 2024-11-04 23:47:03

品牌	Logo	应用领域
其他 - ETC		开关双极性晶体管
页数	文件大小	规格书
9页	169K
描述
IGBT Modules - Single Switch

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DIM400BSS12-A 数据手册

DIM400BSS12-A000

Single Switch IGBT Module

Replaces Dedember 2003 version, issue DS5672-2.3

DS5672-3.0 February 2004

FEATURES

KEY PARAMETERS

V_CES

V_CE(sat)

I_C

1200V

2.2V

400A

800A

I 10µs Short Circuit Withstand

I Non Punch Through Silicon

I Isolated Copper Baseplate

(typ)

(max)

I_C(PK)

*(measured at the power busbars and not the auxiliary terminals)

APPLICATIONS

I Inverters

I Motor Controllers

1(C)

4(C¹)

2(E)

5(E¹)

The Powerline range of high power modules includes half

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 3600A.

3(G¹)

The DIM400BSS12-A000 is a single switch 1200V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) plus full 10µs short circuit withstand.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

Fig. 1 Single switch circuit diagram

ORDERING INFORMATION

Order As:

DIM400BSS12-A000

Note: When ordering, please use the whole part number.

Outline type code: B

(See package details for further information)

Fig. 2 Module outline

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/9

www.dynexsemi.com

12 3 4 5 6 7...9

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