Datasheet > DIM400DDM12-A

DIM400DDM12-A

更新时间： 2024-09-22 23:47:03

品牌	Logo	应用领域
其他 - ETC		开关双极性晶体管
页数	文件大小	规格书
10页	182K
描述
IGBT Modules - Dual Switch

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数据手册

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DIM400DDM12-A 数据手册

DIM400DDM12-A000

Dual Switch IGBT Module

Replaces July 2002, version DS5532-2.1

DS5532-3.0 March 2003

FEATURES

KEY PARAMETERS

V_CES

V_CE(sat)

I_C

1200V

2.2V

400A

800A

I 10µs Short Circuit Withstand

I High Thermal Cycling Capability

I Non Punch Through Silicon

I Isolated MMC Base with AlN Substrates

(typ)

(max)

I_C(PK)

*(measured at the power busbars and not the auxiliary terminals)

APPLICATIONS

I High Reliability Inverters

I Motor Controllers

I Traction Drives

1(E1)

2(C2)

12(C²)

5(E¹)

6(G¹)

11(G²)

10(E²)

The Powerline range of high power modules includes half

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 2400A.

7(C¹)

3(C1)

4(E2)

The DIM400DDM12-A000 is a dual switch 1200V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) plus full 10µs short circuit withstand. This module is

optimised applications requiring high thermal cycling capability.

Fig. 1 Dual switch circuit diagram

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM400DDM12-A000

Note: When ordering, please use the whole part number.

Outline type code: D

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/10

www.dynexsemi.com

12 3 4 5 6 7...10

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