Datasheet > 晶体管 > IGBT> DIM400GDM33-F032

DIM400GDM33-F032

更新时间： 2024-11-26 12:51:43

品牌	Logo	应用领域
DYNEX		晶体开关晶体管双极性晶体管栅
页数	文件大小	规格书
8页	366K
描述
Dual Switch IGBT Module

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技术参数
数据手册

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DIM400GDM33-F032 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.73	最大集电极电流 (IC)：	400 A
集电极-发射极最大电压：	3300 V	门极-发射极最大电压：	20 V
元件数量：	2	最高工作温度：	150 °C
最大功率耗散 (Abs)：	5200 W	子类别：	Insulated Gate BIP Transistors
Base Number Matches：	1

DIM400GDM33-F032 数据手册

DIM400GDM33-F032

Dual Switch IGBT Module

Replaces DS5969-1

DS5969-2 September 2012 (LN29761)

FEATURES

KEY PARAMETERS



10µs Short Circuit Withstand

V_CES

V_CE(sat)* (typ)

I_C

I_C(PK)

3300V

2.8V

400A

800A

High Thermal Cycling Capability

Soft Punch Through Silicon

Isolated AlSiC Base with AlN Substrates

9.5kV Internal Isolation

(max)

* Measured at the auxiliary terminals

Lead Free construction

1(E1)

2(C)

7(E¹)

10(C²)

9(G²)

APPLICATIONS



High Reliability Inverters

Motor Controllers

Traction Drives

Choppers

6(G¹)

5(C¹)

8(E²)

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

3(C1)

4(E2)

Fig. 1 Circuit configuration

The DIM400GDM33-F032 is a single switch 3300V, n-

channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide

reverse bias safe operating area (RBSOA) plus 10μs

short circuit withstand. This device is optimised for

traction drives and other applications requiring high

thermal cycling capability.

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

Outline type code: G

DIM400GDM33-F032

(See Fig. 11 for further information)

Fig. 2 Package

Note: When ordering, please use the complete part

number

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

1/8

www.dynexsemi.com

12 3 4 5 6 7 8

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