Datasheet > DIM250PHM33-TL000

DIM250PHM33-TL000

更新时间： 2024-11-24 01:17:23

品牌	Logo	应用领域
DYNEX		双极性晶体管
页数	文件大小	规格书
8页	360K
描述
Half Bridge IGBT Module

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DIM250PHM33-TL000 数据手册

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DIM250PHM33-TL000

Half Bridge IGBT Module

DS6116-1 July 2013 (LN30665)

FEATURES

KEY PARAMETERS



Low V_CE(sat)Device

V_CES

V_CE(sat)* (typ)

I_C

I_C(PK)

3300V

2.0V

250A

500A

10µs Short Circuit Withstand

(max)

High Thermal Cycling Capability

High Current Density Enhanced DMOS SPT

Isolated AlSiC Base with AlN Substrates

* Measured at the auxiliary terminals

APPLICATIONS

1(E1/C2)

2(C1)



High Reliability Inverters

Motor Controllers

Traction Auxiliaries

Choppers

3(E2)

5(E¹)

4(G¹)

8(C¹)

7(E²)

6(G²)

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

The DIM250PHM33-TL000 is a Low V_CE(sat)half bridge

3300V, soft punch through n-channel enhancement

mode, insulated gate bipolar transistor (IGBT)

chopper module configured with the lower arm of the

bridge controlled. The IGBT has a wide reverse bias

Fig. 1 Circuit configuration

safe operating area (RBSOA).

This device is

optimised for traction drives and other applications

requiring high thermal cycling capability.

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM250PHM33-TL000

Outline type code: P

(See Fig. 11 for further information)

Fig. 2 Package

Note: When ordering, please use the complete part

number

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

1/8

www.dynexsemi.com

12 3 4 5 6 7 8

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