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DIM25HHT12-B000 PDF预览

DIM25HHT12-B000

更新时间： 2024-11-05 20:39:59
品牌 Logo 应用领域
DYNEX 局域网电动机控制栅晶体管
页数 文件大小 规格书
11页 147K
描述
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-10

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中文翻译

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DIM25HHT12-B000 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-XUFM-X10
针数：10Reach Compliance Code：unknown
风险等级：5.84外壳连接：ISOLATED
最大集电极电流 (IC)：35 A集电极-发射极最大电压：1200 V
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 代码：R-XUFM-X10
元件数量：2端子数量：10
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子形式：UNSPECIFIED端子位置：UPPER
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：400 ns标称接通时间 (ton)：187 ns
Base Number Matches：1

DIM25HHT12-B000 数据手册

 浏览型号DIM25HHT12-B000的Datasheet PDF文件第2页浏览型号DIM25HHT12-B000的Datasheet PDF文件第3页浏览型号DIM25HHT12-B000的Datasheet PDF文件第4页浏览型号DIM25HHT12-B000的Datasheet PDF文件第5页浏览型号DIM25HHT12-B000的Datasheet PDF文件第6页浏览型号DIM25HHT12-B000的Datasheet PDF文件第7页 
DIM25HHT12-B000  
Trench Gate IGBT Half Bridge Module  
Preliminary Information  
DS5352-2.1 September 2001  
KEY PARAMETERS  
FEATURES  
■ Trench Gate  
VCES  
VCE(sat) (typ)  
IC25  
IC75  
ICM  
tsc  
(max) 1200V  
1.9V  
(max) 35A  
(max) 25A  
(max) 75A  
(max) 10µs  
■ Enhancement Mode n-Channel Device  
■ Non Punch Through Structure  
■ High Switching Speed  
■ Low On-state Saturation Voltage  
■ High Input Impedance Simplifies Gate Drive  
■ Latch-Free Operation  
■ Fully Short Circuit Rated To 10µs  
■ Wide RBSOA  
H
I
J K L  
M
N
APPLICATIONS  
5
1
6
2
7
3
8
4
■ High Frequency Inverters  
■ Motor Control  
■ Switched Mode Power Supplies  
■ High Frequency Welding  
■ UPS Systems  
A
B C DE  
F
G
■ PWM Drives  
The DIM25HHT12-B000 is a robust non punch through  
trench gate n-channel, enhancement mode insulated gate  
bipolar transistor (IGBT) module designed for low power  
dissipation in a wide range of low to medium voltage  
applications such as power supplies and motor drives.  
Trench Gate technology offers significant improvements  
when compared with conventional planar IGBTs. The high  
impedance gate simplifies gate drive considerations,  
allowing operation directly from low power control circuitry.  
Outline type code: H (ECO-PAC)  
(See Package Details for further information)  
Fig.1 Pin connections - top view (not to scale)  
G
NTC  
Low saturation voltages minimise power dissipation,  
thereby reducing the running cost of the overall system in  
which they are used.  
H
C
The DIM25HHT12-B000 is fully short circuit rated  
making it especially suited for motor control and other  
arduous applications.  
M
L
N
B
A
Fig.2 DIM25HHT12-B000 circuit  
Typical applications include high frequency inverters  
for motor control, PWM, welding and heating apparatus.  
The Powerline range of IGBTs is also applicable to  
switched mode and uninterruptible power supplies.  
ORDERING INFORMATION  
Order as:  
DIM25HHT12-B000  
Note: When ordering use complete part number.  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
1/11  
www.dynexsemi.com  
1234567...11

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