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DIM300BSS12-E PDF预览

DIM300BSS12-E

更新时间: 2024-01-14 17:13:24
品牌 Logo 应用领域
其他 - ETC 开关双极性晶体管
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9页 176K
描述
IGBT Modules - Single Switch

DIM300BSS12-E 数据手册

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DIM300BSS12-E000  
Single Switch IGBT Module  
PDS5703-1.2 January 2004  
FEATURES  
KEY PARAMETERS  
VCES  
VCE(sat)  
IC  
1200V  
1.7V  
300A  
600A  
I Trench Gate Field Stop Technology  
I Low Conduction Losses  
I Low Switching Losses  
(typ)  
(max)  
(max)  
IC(PK)  
I 10µs Short Circuit Withstand  
APPLICATIONS  
I Motor Drives  
I Wind Turbines  
I UPS Systems  
1(C)  
4(C1)  
2(E)  
5(E1)  
3(G1)  
The Powerline range of high power modules includes half  
bridge, chopper, dual, single and bi-directional switch  
configurations covering voltages from 600V to 3300V and  
currents up to 3600A.  
The DIM300BSS12-E000 is a single switch 1700V, n channel  
enhancement mode, insulated gate bipolar transistor (IGBT)  
module. The IGBT has a wide reverse bias safe operating area  
(RBSOA) plus full 10µs short circuit withstand.  
Fig. 1 Single switch circuit diagram  
The module incorporates an electrically isolated base plate  
and low inductance construction enabling circuit designers to  
optimise circuit layouts and utilise grounded heat sinks for safety.  
ORDERING INFORMATION  
Order As:  
DIM300BSS12-E000  
Note: When ordering, please use the complete part number.  
Outline type code: B  
(See package details for further information)  
Fig. 2 Module Outline  
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.  
1/8  
www.dynexsemi.com  

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