5秒后页面跳转
DIM25HHT12 PDF预览

DIM25HHT12

更新时间: 2024-11-06 06:25:31
品牌 Logo 应用领域
DYNEX 局域网晶体管
页数 文件大小 规格书
3页 238K
描述
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-8

DIM25HHT12 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X8针数:8
Reach Compliance Code:unknown风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):25 A
集电极-发射极最大电压:1200 VJESD-30 代码:R-XUFM-X8
端子数量:8封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管元件材料:SILICON
Base Number Matches:1

DIM25HHT12 数据手册

 浏览型号DIM25HHT12的Datasheet PDF文件第2页浏览型号DIM25HHT12的Datasheet PDF文件第3页 

与DIM25HHT12相关器件

型号 品牌 获取价格 描述 数据表
DIM25HHT12-B000 DYNEX

获取价格

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-10
DIM25HTT12 DYNEX

获取价格

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
DIM25HTT12-B000 DYNEX

获取价格

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-10
DIM300BSS12-E ETC

获取价格

IGBT Modules - Single Switch
DIM300BSS12-E000 DYNEX

获取价格

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, B, MODULE-5
DIM300BSS17-E ETC

获取价格

IGBT Modules - Single Switch
DIM300BSS17-E000 DYNEX

获取价格

Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, B, 5 PIN
DIM300WHS12-A ETC

获取价格

IGBT Modules - Half Bridge
DIM300WHS12-A000 DYNEX

获取价格

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, W, 7 PIN
DIM300WHS12-E ETC

获取价格

IGBT Modules - Half Bridge